Excess noise factor of neutron-irradiated silicon avalanche photodiodes has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode E is the energy per incident particle and F is the excess noise factor of the Analytical Formulas for Mean Gain and Excess Noise Factor in InAs Avalanche Photodiodes Erum Jamil, Member, IEEE, Majeed M. Hayat , Fellow, IEEE, and Gordon A. Keeler, Senior Member, IEEE Abstract—It has been known that McIntyre's local mul-tiplication theory for avalanche photodiodes (APDs) does Avalanche photodiode detectors (APDs) have and will continue to be used in many diverse applications such as laser range finders, data communications or photon correlation studies. This paper discusses APD structures, critical performance parameter and excess noise factor. Abstract. Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for avalanche photodiodes using the dead-space multiplication theory in the regime of small multiplication width and high applied electric field. Excess Noise Factor All avalanche photodiodes generate excess noise due to the statistical nature of the avalanche process. The 'Excess Noise Factor' is generally denoted as 'F'. As shown in the noise equation (Equation 2), OF is the factor by which the statistical noise on the APD current (equal excess noise factor A factor, F, indicating the increase in shot noise in an avalanche photodiode as compared with the ideal multiplier, which is noiseless. The noise, which results from variations in avalanche gains, is significant in detectors made of semiconductors with similar ionization coefficient values for electrons and holes, such as On the analytical formulation of excess noise in avalanche photodiodes with dead space approximate formulas are developed to calculate the mean gain and excess noise factor for avalanche photodiodes using the dead-space multiplicatio